IAP200B120 Integrated Advanced PowerStack

200A / 1200V Full-Bridge IGBT Inverter

FEATURES INCLUDE
• Multi-Function Power Assembly
• Compact Size –8.00” H X 17.60” W X 11.00” D
• DC Bus Voltages to 850VDC
• Snubber-less operation to 650VDC
• Switching frequencies to over 20kHz
• Protective circuitry with fail-safe opto-isolated fault annunciation, including:
	• OverCurrent • OverVoltage • OverTemperature	• Short circuit • P.S. UnderVoltage
• Opto-isolated or fiber-optic gate drive and fault signal output for electrical isolation and noise immunity
• Integrated cooling with temperature sensors and feedback
• Many options- SCR/Diode Front End, etc.

Configurable Power

The IAP200B120 PowerStack is a flexible, highly integrated IGBT based power assembly with a wide range of applications. These include inverters for renewable energy, energy storage, motor controls, switch mode power supplies (SMPS), UPS, welders, etc. The IAP200B120 PowerStack can be operated at frequencies to over 20kHz. The IAP200B120 PowerStack can be configured as a full bridge or three-phase bridge inverter mounted on an air-cooled or liquid-cooled heat sink. Configurations include options for (full, half or no control) converter input circuitry, inverter output circuitry, cooling and a wide variety of drivers and safety features for the converter front end and IGBT inverter output stage.

To operate at high switching frequencies, the IAP200B120 PowerStack utilizes a low inductance laminated bus structure, optically isolated or fiber optically coupled gate drive interfaces, isolated gate power supplies and a DC-link capacitor bank.

The IAP200B120 PowerStack provides built in protection features including: over voltage, under voltage lockout, over current, over temperature, short circuit and optional airflow or liquid flow indicators.

Flexibility is a key feature of the IAP200B120 PowerStack. Options include: a choice of converter front ends, rectifier, half or full SCR control, with or without SCR gate firing boards and soft-start circuitry. A choice of cooling methods, forced air or liquid is also available. Customer provided PWM is optically coupled or a fiber optic link can be provided to the IGBT interface. Current feedback is provided by Hall effect transducers.

The IAP200B120 PowerStack is rated to maximum input voltages up to 850 VDC, switching frequencies to over 20kHz, includes many safety features to protect the IGBTs and output circuitry and can be configured to meet your application.

IAP200B120 Integrated Advanced PowerStack
Absolute Maximum Ratings – TJ=25°C unless otherwise specified
General	Symbol	Value	Units
IGBT Junction Temperature	T_J	-40 to +150	°C
Storage Temperature	T_STG	-40 to +125	°C
Voltage applied to DC terminals	V_CC	850	Volts
Isolation voltage, AC 1 minute, 60Hz sinusoidal	V_ISO	2500	Volts
IGBT Inverter
Collector Current (TC=25°C)	I_C	200	Amperes
Peak Collector Current (TJ<150°C)	I_CM	400	Amperes
Emitter Current	I_E	200	Amperes
Peak Emitter Current	I_EM	400	Amperes
Maximum Collector Dissipation (TJ<150°C)	P_CD	1100	Watts
Gate Drive Board
Unregulated +24V Power Supply		30	Volts
Regulated +15V Power Supply		18	Volts
PWM Signal Input Voltage		15	Volts
Factory Settable from 3.3 to 15V
Fault Output Supply Voltage		30	Volts
Fault Output Current		50	mA

IGBT Inverter Electrical Characteristics, TJ=25°C unless otherwise specified
Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Collector Cutoff Current	I_CES	V_CE=V_CES, VGE=_0V	-	-	1	mA
Collector-Emitter Saturation Voltage	V_CE(sat)	I_C=200A, T_J=25°C	-	1.75	2.15	Volts
Collector-Emitter Saturation Voltage	V_CE(sat)	I_C=200A, T_J=125°C	-	2.0	-	Volts
Emitter-Collector Voltage	V_EC	I_E=200A	-	-	3.2	Volts
Inductive Load Switching Times	t_d(on)	V_CC=600V I_C=200A V_GE=15V R_G=2.7Ω	-	-	200	ηs
	t_r		-	-	45	ηs
	t_d(off)		-	-	500	ηs
	t_r		-	-	100	ηs
Diode Reverse Recovery Time	T_rr		-	-	200	ηs
Diode Reverse Recovery Charge	Q_rr		-	20.0	-	µC
DC Link Capacitance			-	4950	-	µF

Thermal and Mechanical Parameters
Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
IGBT Thermal Resistance, Junction to Case	R_Θ(j-c)	Per IGBT ½ module	-	-	0.135	°C/W
FWD Thermal Resistance, Junction to Case	R_Θ(j-c)	Per FWD ½ module	-	-	0.20	°C/W
Heatsink Thermal Resistance	R_Θ(s-a)	1500 LFM airflow	-	.045	-	°C/W
Mounting Torque, AC terminals			-	75	90	In-lb
Mounting Torque, DC terminals			-	130	150	In-lb
Mounting Torque, case mounting			-	130	150	In-lb
Weight			-	21	-	lb

Gate Drive Board Electrical Characteristics
Parameter	Min	Typ	Max	Units
Unregulated +24V Power Supply	20	24	30	Volts
Regulated +15V Power Supply	14.4	15	18	Volts
PWM Input On Threshold	12	15	-	Volts
PWM Inout Off Threshold	-	0	2	Volts
Output Overcurrent Trip	-	300	-	Amperes
Overtemperature Trip	86	88	90	°C
Overvoltage Trip	-	900	-	Volts
DC Link Voltage Feedback	See Figure Below			Volts
Heatsink Temperature Feedback	See Figure Below			Volts
Output Current Feedback	See Figure Below			Volts

Performance Curves

Effective Output Current vs. Carrier Frequency (Typical)

Conditions	Symbol	Value	Units
Ambient Temperature	T_A	40	°C
DC Bus Voltage	V_CC	600	Volts
Load Power Factor	COS Φ	0.8
IGBT Saturation Voltage	V_CE(sat)	Typical @ T_J=125°C	Volts
IGBT Switching Loss	E_SW	Typical @ T_J=125°C	mJ
Airflow	-	1500	LFM
Switching Conditions	Single-phase PWM, 60Hz sinusoidal output

Interface
Pin #	Signal Name	Description
1	Shield	Connected to circuit ground
2	PWM A-	0-15V signal controlling the duty cycle of A- IGBT
3	Phase A Error¹	Open collector output, external pull-up resistor required. LOW=No Error; Floating=Phase A overcurrent or short circuit
4	PWM A+	0-15V signal controlling the duty cycle of A+ IGBT
5	PWM B-	0-15V signal controlling the duty cycle of B- IGBT
6	Phase B Error¹	Open collector output, external pull-up resistor required. LOW=No Error; Floating=Phase A overcurrent or short circuit
7	PWM B+	0-15V signal controlling the duty cycle of B+ IGBT
8	Not Used
9	Not Used
10	Not Used
11	OverTemp¹	Open collector output, external pull-up resistor required. LOW=No Error; Floating=Heatsink overtemp
12	Not Connected
13	DC Link Voltage	Analog voltage representation of DC link voltage
14	24VDC Input Power²	20-30VDC input voltage range
15	24VDC Input Power²	20-30VDC input voltage range
16	15VDC Input Power²	14.4-18VDC input voltage range
17	15VDC Input Power²	14.4-18VDC input voltage range
18	GND	Ground reference for 15 and 24VDC inputs
19	GND	Ground reference for 15 and 24VDC inputs
20	Heatsink Temperature	Analog voltage representation of heatsink temperature
21	GND³	Tied to pins 18 and 19
22	I_OUT Phase A	Analog voltage representation of phase A output current
23	GND³	Tied to pins 18 and 19
24	I_OUT Phase B	Analog voltage representation of phase B output current
25	Not Used
26	Not Used

NOTES:
	1. Open collectors can be pulled up to 30VDC Max and sink 50mA continuous.
	2. DO NOT connect a 15VDC and 24VDC source to the unit at the same time. Use one or the other.
	3. GND signals to be used for analog feedback signals, i.e. twisted pair with I_OUT Phase A.

Gate Drive Interface Connector
Description	Symbol	Type	Manufacturer
Gate Drive Interface Header	J1	0.100” x 0.100” latching header, 26 pin	3M #3429-6002 or equivalent
Recommending Mating Socket	-	0.100” x 0.100” IDC socket, 26 pin	3M #3399-7600 or equivalent
Recommended Strain Relief	-	Plastic strain relief	3M #3448-3026 or equivalent

Mechanical Information

IAP200B120 Integrated Advanced PowerStack

200A / 1200V Full-Bridge IGBT Inverter

IGBT & SCR Drivers, Inverters, Converters, Bridge Rectifiers, Switches & Semiconductor Assemblies

High Power Inverters

High Power Converters

High-Power Semiconductor Assemblies

IGBT and SCR Gate Driver Boards

Custom High Power Systems